SiC potential defect expansion inspection device
Reproducing bipolar degradation through UV laser irradiation! Sample evaluation that normally takes 2 months can be completed in 2 days.
This product is a SiC defect inspection device that reveals defects that had not manifested without electrical current by using UV laser irradiation, thereby shortening the evaluation cycle of research and development. 【Features】 ■ UV Irradiation - Achieves uniform laser irradiation from small sizes like chips to the entire wafer. - Calculates hole concentration from epitaxial thickness and doping concentration, and proposes radiation intensity corresponding to current density. ■ PL Measurement Function - Observes defects from multiple angles at wavelengths of 380nm, 420nm, and over 700nm. - Enables identification and classification of layered defects (buffer layer, drift layer, substrate interface) using image processing technology. - Includes mapping function with coordinates of defect occurrence. * Please feel free to consider a trial measurement (free of charge) first. * For more details, please download the PDF or feel free to contact us.
- Company：アイテス
- Price：Other
